 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SSG60N60 SERIES 85 AMP 600 VOLTS FAST POWER IGBT APPLICATION NOTES: * 600V IGBT Technology * Positive Temperature Coefficient for Ease of Paralleling * High Current Switching for Motor Drives and Inverters * Low Saturation Voltage at High Currents. * Low Switching Losses. * High Short Circuit Capability * MOS Input, Voltage Controlled. * Hermetic Sealed Construction. * TX, TXV, and S-Level Screening Available. DESIGNER'S DATA SHEET Part Number /Ordering Information SSG60N60 N _ TX Screening 2/: _ = Not Screened TX = TX Level TXV = TXV Level S = Space Level Lead Bend 3/4/_ = Straight UB = Up Bend DB = Down Bend Package: 3/ N = TO-258, Isolated P = TO-259, Isolated S2 = SMD2 1/ MAXIMUM RATINGS Collector-Emitter Voltage Continuous Collector Current Average Diode Current Peak Collector Current Gate Emitter Voltage Operating and Storage Temperature Total Device Dissipation @ TC = 25oC Thermal Resistance, Junction to Case TO-258 (N) N, P S2 TO-259 (P) @ TC = 25oC @ TC = 100oC SYMBOL VCEO IC IC(pk) VGE TJ, TSTG PD R JC SMD2 (S2) VALUE 600 85 60 200 +20 -65 to +200 350 0.5 0.4 UNITS Volts Amps Amps Volts o C W o C/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TG0004A SSG60N60 SERIES ELECTRICAL CHARACTERISTICS 5/ Collector - Emitter Breakdown Voltage (VGE = 0V, IC = 250uA) Collector - Emitter Saturation Voltage (VGE = 15V, IC = 60A) Gate - Emitter Threshold Voltage (VGE = VCE, IC = 250mA) Zero Gate Voltage Collector Current (VCE = 600V, VGE = 0V) Gate - Emitter Leackage Current (VGE = 30V, VCE = 0V) Input Capacitance (VCE = 25V, VGE = 0V, f = 1MHz) Output Capacitance (VCE = 25V, VGE = 0V, f = 1MHz) Reverse Transfer Capacitance (VCE = 25V, VGE = 0V, f = 1MHz) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time (VCC = 400V, IC = 50ADC, VGE = 15 / 0V, RG = --, tP = 10sec, Duty Cycle 1% Tj = 150oC) TJ = 25oC TJ = 150oC SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SYMBOL V(BR)CES VCE (SAT) VGE (th) ICES IGES C iss C oss C rss td(on) tr td(off) tf MIN 600 3 - TYP 1.67 7500 720 93 30 49 130 175 MAX 2.0 6 500 5.0 120 - UNITS V V V A mA nA pF pF pF nsec nsec nsec nsec NOTES: * Pulse Test: Pulse Width = 300us, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500. 3/ For Package Outlines Contact Factory. 4/ Up and Down Bend Configurations Available for N and P (TO-258 and TO-259) Packages Only. 5/ All Electrical Characteristics @25 C, Unless Otherwise Specified. o Available Part Numbers: SSG60N60N SSG60N60NDB SSG60N60NUB PIN ASSIGNMENT PACKAGE TO-258 TO-259 SMD2 Collector Pin1 Pin 1 Pin 1 Emitter Pin 2 Pin 2 Pin 2 Gate Pin 3 Pin 3 Pin 3 |
Price & Availability of SSG60N60NUB
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |